High Performance 1.5 μm Metamorphic InAs Quantum Dot Lasers on GaAs

Author

Mi, Z. ; Yang, J. ; Bhattacharya, P.

Author_Institution

Dept. of Electr. & Comput. Sci., Michigan Univ., Ann Arbor, MI

fYear

2006

fDate

Oct. 29 2006-Nov. 2 2006

Firstpage

868

Lastpage

869

Abstract

In this context, we have investigated the growth kinetics and characteristics of metamorphic InAs QD lasers on GaAs, wherein special techniques of p-doping and tunnel injection are incorporated. As a result, we have realized high quality InAs QDs on GaAs that are comparable, in both photoluminescence (PL) intensity and linewidth (~30 meV), to state-of-the-art 1.1 and 1.3 μm InAs pseudomorphic QDs. 1.5 μm metamorphic lasers made with these heterostructures exhibit ultra-low J_th, large T₀ (556 K), large modulation frequency response and near-zero alpha-parameter and chirp

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical materials; photoluminescence; quantum dot lasers; spectral line breadth; spectral line intensity; 1.5 micron; InAs QD lasers; InAs-GaAs; laser characteristics; laser growth kinetics; metamorphic InAs quantum dot lasers; p-doping techniques; photoluminescence intensity; spectral linewidth; tunnel injection techniques; Buffer layers; Chirp modulation; Gallium arsenide; Laser theory; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9556-5

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.279082

Filename

4054462