• DocumentCode
    3132897
  • Title

    Performance analysis in modeling micro capacitive pressure sensor

  • Author

    Tsui, Chun-Shan

  • Author_Institution
    Pitotech, Changhua, Taiwan
  • fYear
    2009
  • fDate
    21-23 Oct. 2009
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    In this paper, a finite element numerical (FEM) simulation via COMSOL Multiphysics was carried out to study the performance of micro capacitive pressure sensor. At first stage, the effect of fabrication was considered. At second stage, calculating the relationship between capacitance and applied pressure under different operation condition, including bonding temperature, thermal expansion coefficient of silicon and thickness of pressurized compartment by using Taguchi Method. Finally, finding the best condition of fabrication and operation. The simulation showed that capacitance of the sensor was as the function of the operating pressure. The higher bonding temperature was fabricated, the lower capacitance can be achieved under the same applied load. And thinner thickness of the pressurized compartment provided good resolution. Thus, the performance of micro capacitive pressure sensor can be predicted with qualitative analysis and with quantitative analysis via numerical simulation.
  • Keywords
    Taguchi methods; capacitance; capacitive sensors; elemental semiconductors; finite element analysis; microsensors; pressure sensors; silicon; thermal expansion; COMSOL Multiphysics; Taguchi method; bonding temperature; capacitance; finite element numerical simulation; microcapacitive pressure sensor; performance analysis; pressurized compartment; quantitative analysis; thermal expansion coefficient; Bonding; Capacitance; Capacitive sensors; Fabrication; Finite element methods; Numerical simulation; Performance analysis; Silicon; Temperature sensors; Thermal expansion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-4341-3
  • Electronic_ISBN
    978-1-4244-4342-0
  • Type

    conf

  • DOI
    10.1109/IMPACT.2009.5382303
  • Filename
    5382303