Title :
Optical and electrical properties of InN grown by the atomic layer epitaxy
Author :
Inushima, T. ; Yaguchi, T. ; Nagase, A. ; Iso, A. ; Shiraishi, T. ; Ooya, S.
Author_Institution :
Dept. of Commun. Eng., Tokai Univ., Kanagawa, Japan
Abstract :
InN single crystal was grown by UV-assisted atomic layer epitaxy under atmosphere pressure. The InN obtained was a degenerate n-type semiconductor with Hall mobility of 64 cm2/Vsec and carrier concentration of 7×1020/cm3. From the plasma oscillation frequency in the reflection spectra, the electron effective mass was determined to be 0.12 m0
Keywords :
Hall mobility; III-V semiconductors; atomic layer epitaxial growth; carrier density; effective mass; electrical resistivity; energy gap; indium compounds; reflectivity; semiconductor epitaxial layers; semiconductor growth; semiconductor plasma; visible spectra; Hall mobility; InN; InN single crystal; UV-assisted atomic layer epitaxy; atmosphere pressure; atomic layer epitaxy; carrier concentration; degenerate n-type semiconductor; electrical properties; electron effective mass; optical properties; plasma oscillation frequency; reflection spectra; Atmosphere; Atom optics; Atomic layer deposition; Effective mass; Electrons; Epitaxial growth; Frequency; Hall effect; Optical reflection; Plasmas;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522110
