Optical and electrical properties of InN grown by the atomic layer epitaxy

Author

Inushima, T. ; Yaguchi, T. ; Nagase, A. ; Iso, A. ; Shiraishi, T. ; Ooya, S.

Author_Institution

Dept. of Commun. Eng., Tokai Univ., Kanagawa, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

187

Lastpage

190

Abstract

InN single crystal was grown by UV-assisted atomic layer epitaxy under atmosphere pressure. The InN obtained was a degenerate n-type semiconductor with Hall mobility of 64 cm²/Vsec and carrier concentration of 7×10²⁰/cm³. From the plasma oscillation frequency in the reflection spectra, the electron effective mass was determined to be 0.12 m₀

Keywords

Hall mobility; III-V semiconductors; atomic layer epitaxial growth; carrier density; effective mass; electrical resistivity; energy gap; indium compounds; reflectivity; semiconductor epitaxial layers; semiconductor growth; semiconductor plasma; visible spectra; Hall mobility; InN; InN single crystal; UV-assisted atomic layer epitaxy; atmosphere pressure; atomic layer epitaxy; carrier concentration; degenerate n-type semiconductor; electrical properties; electron effective mass; optical properties; plasma oscillation frequency; reflection spectra; Atmosphere; Atom optics; Atomic layer deposition; Effective mass; Electrons; Epitaxial growth; Frequency; Hall effect; Optical reflection; Plasmas;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522110

Filename

522110