Deep-UV Raman Scattering Analysis of Re-Crystallization in Ultra-Shallow Junction Implanted Si under Various Annealing Conditions

By deep-UV Raman scattering, we have characterized the recrystallization process of Si wafers that were ion-implanted with As, P and B in a very thin top layer. Thermal annealing was conducted in two ways; flash-lamp annealing and thermal annealing (hot plate). Our results suggested that the recrystallization process occurred more efficiently by flash-lamp annealing. Furthermore, a pre-amorphization of a wafer by Ge-implantation prior to the main implantation process was very effective in promoting the recrystallization process. It will be of great interest, to directly observe the evolution of crystal-lattice recovery by high-resolution cross-sectional transmission electron microscopy (TEM).