DocumentCode :
3132919
Title :
Reliable and self-repairing SRAM in nano-scale technologies using leakage and delay monitoring
Author :
Mukhopadhyay, Saibal ; Kang, Kunhyuk ; Mahmoodi, Hamid ; Roy, Kaushik
Author_Institution :
Dept. of ECE, Purdue Univ., West Lafayette, IN
fYear :
2005
fDate :
8-8 Nov. 2005
Lastpage :
1135
Abstract :
The inter-die and intra-die variations in process parameters result in large number of failures in an SRAM array degrading the design yield. In this paper, we propose an adaptive repairing technique for SRAM based on leakage and delay monitoring. Leakage and delay monitoring is used to effectively separate dies with different inter-die Vts from each other. Using the leakage (or delay) monitoring and adaptive body bias, we propose a reliable and self-repairing SRAM which has reduced number of parametric failures under high inter-die and intra-die Vt variations. The proposed self-repairing SRAM improves the design yield by 5%-40% in predictive 70nm technology from BPTM
Keywords :
SRAM chips; delays; nanotechnology; 70 nm; adaptive body bias; adaptive repairing technique; delay monitoring; leakage monitoring; nanoscale technologies; self-repairing SRAM; Condition monitoring; Degradation; Delay effects; Fluctuations; Gate leakage; Random access memory; Resource description framework; Subthreshold current; Testing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference, 2005. Proceedings. ITC 2005. IEEE International
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-9038-5
Type :
conf
DOI :
10.1109/TEST.2005.1584080
Filename :
1584080
Link To Document :
بازگشت