Title :
Influence of arsenic flux ratio in the thermal cleaning process on InP (100) surface characteristics
Author :
Washima, M. ; Tsuchiya, T. ; Tani, T. ; Sakaguchi, H.
Author_Institution :
Adv. Res. Center, Hitachi Cable Ltd., Ibaraki, Japan
Abstract :
Influence of arsenic flux ratio in the thermal cleaning process on InP (100) surface characteristics was investigated using reflected high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). We observed that the reconstruction temperature of an In-stabilized (4×2) structure and an As-stabilized (2×4) structure was dependent on the arsenic pressure. The AFM images showed that the height and number of the InAs islands on the InP surface were determined by the arsenic pressure during the thermal cleaning process
Keywords :
III-V semiconductors; atomic force microscopy; heat treatment; indium compounds; reflection high energy electron diffraction; semiconductor technology; surface cleaning; surface reconstruction; surface topography; AFM; As-stabilized (2×4) structure; In-stabilized (4×2) structure; InAs; InP; InP (100) surface characteristics; RHEED; arsenic flux ratio; arsenic pressure; atomic force microscopy; islands; reconstruction temperature; reflected high-energy electron diffraction; thermal cleaning process; Atomic force microscopy; Indium phosphide; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface cleaning; Surface reconstruction; Surface roughness; Temperature dependence; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522112
