Influence of arsenic flux ratio in the thermal cleaning process on InP (100) surface characteristics

Author

Washima, M. ; Tsuchiya, T. ; Tani, T. ; Sakaguchi, H.

Author_Institution

Adv. Res. Center, Hitachi Cable Ltd., Ibaraki, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

195

Lastpage

197

Abstract

Influence of arsenic flux ratio in the thermal cleaning process on InP (100) surface characteristics was investigated using reflected high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). We observed that the reconstruction temperature of an In-stabilized (4×2) structure and an As-stabilized (2×4) structure was dependent on the arsenic pressure. The AFM images showed that the height and number of the InAs islands on the InP surface were determined by the arsenic pressure during the thermal cleaning process

Keywords

III-V semiconductors; atomic force microscopy; heat treatment; indium compounds; reflection high energy electron diffraction; semiconductor technology; surface cleaning; surface reconstruction; surface topography; AFM; As-stabilized (2×4) structure; In-stabilized (4×2) structure; InAs; InP; InP (100) surface characteristics; RHEED; arsenic flux ratio; arsenic pressure; atomic force microscopy; islands; reconstruction temperature; reflected high-energy electron diffraction; thermal cleaning process; Atomic force microscopy; Indium phosphide; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface cleaning; Surface reconstruction; Surface roughness; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522112

Filename

522112