Extension Engineering using Carbon co-Implantation Technology for Low Power CMOS Design with Phosphorus- and Boron-Extension

Author

Momiyama, Y. ; Okabe, K. ; Nakao, H. ; Kojima, M. ; Kase, M. ; Sugii, T.

Author_Institution

Fujitsu Ltd., Akiruno

fYear

2007

fDate

8-9 June 2007

Firstpage

63

Lastpage

64

Abstract

We have developed a carbon (C) co-implantation technology that enables drastic improvement of Vth rolloff in nMOSFET having phosphorus (P) extension while maintaining the current drive, and reduces the extension sheet resistance in pMOSFET having boron (B) extension. The data revealed that C introduced into the extension region suppresses the P-extension tail for nMOSFET and improves B activation ratio for pMOSFET. We also found that combination of C and indium (In) pocket plays an important role for Vth rolloff improvement in nMOSFET.

Keywords

CMOS integrated circuits; MOSFET; boron; carbon; elemental semiconductors; indium; ion implantation; phosphorus; semiconductor doping; silicon; B activation ratio; Si:B,C - Interface; Si:In,C - Interface; Si:P,C - Interface; boron-extension; carbon co-implantation technology; extension engineering; extension sheet resistance; indium pocket; low power CMOS design; nMOSFET; pMOSFET; phosphorus-extension; CMOS process; CMOS technology; Capacitance; Design engineering; Impurities; Laboratories; MOSFET circuits; Power engineering and energy; Tail; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2007 International Workshop on

Conference_Location

Kyoto

Print_ISBN

1-4244-1103-3

Electronic_ISBN

1-4244-1104-1

Type

conf

DOI

10.1109/IWJT.2007.4279948

Filename

4279948