DocumentCode :
3133083
Title :
Chemical Structure of InP Surface in MOVPE Studied by Surface Photo-Absorption
Author :
Kobayashi, Yasuyuki ; Kobayashi, Naoki
fYear :
1995
fDate :
9-13 May 1995
Firstpage :
225
Keywords :
Bonding; Chemicals; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical surface waves; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Print_ISBN :
0-7803-2147-2
Type :
conf
DOI :
10.1109/ICIPRM.1995.522120
Filename :
522120
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3133083
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