Title :
A 1.2-volt operation power PHEMT for personal handy phone handset application
Author :
Chang, E.Y. ; Lee, Di-Houng ; Chen, S.H.
Author_Institution :
Dept. of Mater. Sci., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A high efficiency and high linearity 1.2 V operational AlGaAs-InGaAs-GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; digital radio; gallium arsenide; indium compounds; land mobile radio; low-power electronics; personal communication networks; power HEMT; quadrature phase shift keying; radiotelephony; telephone sets; 1.2 V; 1.9 GHz; 37 percent; 4-shifted QPSK modulated PHS signal; 43.62 percent; AlGaAs-InGaAs-GaAs; LV PHS handset application; digital wireless PHS handset application; high efficiency device; high electron mobility transistor; high linearity device; low voltage application; personal handy phone handset; power PHEMT; pseudomorphic HEMT; Chirp modulation; Electron mobility; HEMTs; Linearity; Low voltage; MODFETs; PHEMTs; Power generation; Quadrature phase shift keying; Telephone sets;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925757
