• DocumentCode
    3133189
  • Title

    The study of the optical properties of In0.52(Alx Ga1-x)0.48As by variable angle spectroscopic ellipsometry

  • Author

    Pan, J.W. ; Shieh, J.L. ; Gau, J.H. ; Chyi, J.-I.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    245
  • Lastpage
    248
  • Abstract
    The optical properties of In0.52(AlxGa1-x)0.48As epilayers with various x values were systematically studied using variable angle spectroscopic ellipsometry in the wavelength range of 310-1700 nm. The refractive indexes were determined. The energies and broadening parameters of the E1 and E1+Δ1 transitions as a function of Al composition were also examined based on the second-derivative spectra of the dielectric function. The comparison between our results and the reported data is presented
  • Keywords
    III-V semiconductors; aluminium compounds; dielectric function; ellipsometry; gallium arsenide; indium compounds; infrared spectra; refractive index; semiconductor epitaxial layers; spectral line broadening; ultraviolet spectra; visible spectra; 310 to 1700 nm; Al composition; In0.52(AlxGa1-x)0.48As; InAlGaAs; broadening parameters; dielectric function; epilayers; optical properties; refractive indexes; second-derivative spectra; transition energies; variable angle spectroscopic ellipsometry; Ellipsometry; Indium phosphide; Molecular beam epitaxial growth; Optical films; Optical refraction; Optical variables control; Refractive index; Spectroscopy; Substrates; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522125
  • Filename
    522125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3133189