Cyclotron resonance in InP grown by organometallic vapor phase epitaxy with TMIn and TBP

Author

Nakata, H. ; Satoh, K. ; Iwao, T. ; Ohyama, T. ; Otsuka, E. ; Fujiwara, Y. ; Takeda, Y.

Author_Institution

Dept. of Phys., Osaka Univ., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

249

Lastpage

252

Abstract

Far-infrared magnetoabsorption and optically detected impurity resonance are measured in InP layers grown by organometallic vapor phase epitaxy with trimethylindium and tertiarybutylphosphine. High quality of the layers enables us to observe electron cyclotron resonance as well as the 1s to 2p₊ transition of shallow donors. The mobilities estimated from the linewidth of the cyclotron resonance are in the range 51000-97000 cm²/Vs at 4.2 K

Keywords

III-V semiconductors; carrier mobility; cyclotron resonance; impurity states; indium compounds; infrared spectra; magnetoabsorption; microwave-optical double resonance; semiconductor growth; vapour phase epitaxial growth; 1s to 2p₊ transition; 4.2 K; InP; TMIn; cyclotron resonance; electron cyclotron resonance; far-infrared magnetoabsorption; linewidth; mobilities; optically detected impurity resonance; organometallic vapor phase epitaxy; shallow donors; tertiarybutylphosphine; trimethylindium; Cyclotrons; Electrons; Epitaxial growth; Finite impulse response filter; Impurities; Indium phosphide; Magnetic resonance; Magnetic separation; Optical detectors; Superconducting magnets;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522126

Filename

522126