• DocumentCode
    3133215
  • Title

    Anisotropic photocurrent in long-range ordered Ga0.5In 0.5P

  • Author

    Kita, Takashi ; Fujiwara, Akira ; Nakayama, Hiroshi ; Nishino, Taneo

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    257
  • Lastpage
    260
  • Abstract
    In this study, we focus our attention on PC responses in the monolayer superlattice of long-range ordered Ga0.5In0.5 P alloys. Based on our analysis of measured PC spectra by theoretical calculations, the properties of the anisotropic PC as well as a statistical distribution of partially ordered domains and the relationship between the oscillator strength and order parameter are discussed
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; interface states; oscillator strengths; photoconductivity; semiconductor epitaxial layers; semiconductor superlattices; Ga0.5In0.5P; PC response; PC spectra; anisotropic photocurrent; long-range ordered Ga0.5In0.5P; monolayer superlattice; order parameter; oscillator strength; partially ordered domains; statistical distribution; Absorption; Anisotropic magnetoresistance; Erbium; Gallium alloys; Geometrical optics; Optical polarization; Photoconductivity; Photonic band gap; Solids; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522128
  • Filename
    522128