DocumentCode
3133236
Title
Raman spectroscopy study on order-disordered Ga0.52In 0.48P on GaAs grown by MOVPE
Author
Uchida, Kazuo ; Yu, Peter Y. ; Weber, E.R. ; Noto, Nobuhiko
Author_Institution
Tsukuba Lab., Nippon Sanso Co., Ibaraki, Japan
fYear
1995
fDate
9-13 May 1995
Firstpage
261
Lastpage
264
Abstract
We report the first observation of single particle excitation (SPE) in electronic Raman spectroscopy as well as the plasmon related Raman peak located at 352 cm-1 in the ordered Ga0.52 In0.48P:Se with a carrier concentration of >1017 cm-3. These observations indicate that high density thermally excited carriers exist in the ordered Ga0.52 In0.48P:Se. However, the disordered Ga0.52In 0.48P:Se with almost same amount of carrier concentration does not show either SPE or plasmon related peaks. This implies that the ordering might cause a carrier confinement effect to increase the density of carriers. This confinement effect could be possible if the ordered region with a lower bandgap energy is surrounded by the disordered matrix with a higher bandgap energy in the ordered Ga0.52In0.48P
Keywords
III-V semiconductors; Raman spectra; carrier density; energy gap; gallium compounds; indium compounds; selenium; semiconductor epitaxial layers; semiconductor growth; surface plasmons; vapour phase epitaxial growth; 352 cm-1; Ga0.52In0.48P; GaAs; MOVPE; Raman spectroscopy; bandgap energy; carrier concentration; carrier confinement effect; disordered Ga0.52In0.48P:Se; disordered matrix; electronic Raman spectroscopy; high density thermally excited carriers; order-disordered Ga0.52In0.48P; plasmon related Raman peak; single particle excitation; Epitaxial growth; Epitaxial layers; Gallium arsenide; Light scattering; Optical polarization; Optical scattering; Phonons; Raman scattering; Spectroscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522129
Filename
522129
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