A better approach to molecular implantation

Author

Renau, A.

Author_Institution

Varian Semicond. Equip. Assoc. Inc., Gloucester

fYear

2007

fDate

8-9 June 2007

Firstpage

107

Lastpage

112

Abstract

A new approach to molecular implantation is presented. This is based on the use of carborane, a large and thermally stable boron molecule that can be ionized in a standard ion source. The modifications that are needed to allow it to run on a Varian VIISta HCS high current tool are discussed. Data is presented to show that the tool can use carborane for high productivity, energy contamination free boron implants. Data is also presented to demonstrate that this additional capability does not change the tool´s performance for other species and implants. The operation of the tool is described along with productivity and process data for 32 nm logic applications. Electrical data is also presented that illustrates excellent device performance.

Keywords

DRAM chips; boron; ion implantation; logic devices; DRAM devices; Si:B - Interface; Varian VIISta HCS high current tool; carborane; electrical data; energy contamination; logic devices; molecular implantation; size 32 nm; thermal stability; thermally stable boron molecule; Boron; Contamination; Counting circuits; Doping; Implants; Ion sources; Logic devices; Productivity; Random access memory; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2007 International Workshop on

Conference_Location

Kyoto

Print_ISBN

1-4244-1103-3

Electronic_ISBN

1-4244-1104-1

Type

conf

DOI

10.1109/IWJT.2007.4279960

Filename

4279960