Title :
Molecular Implants for Advanced Devices
Author :
Rubin, Leonard M. ; Ameen, Michael S. ; Harris, Mark A. ; Huynh, Chuong
Author_Institution :
Axcelis Technol., Beverly
Abstract :
The use of implants of the B18H22 molecule for advanced IC fabrication are discussed. B18H22 can be implanted at energies up to 4 keV B equivalent at beam currents much higher than those achievable with conventional implant species. B18H22 implants have been used for polysilicon and source/drain extension doping and have shown process equivalence to conventional implants. Using B18H22 may require minor modifications to anneal and resist removal steps to minimize junction leakage and dopant loss.
Keywords :
boron; elemental semiconductors; integrated circuit manufacture; ion implantation; semiconductor doping; silicon; B18H22 - Binary; IC fabrication; Si:B - Interface; advanced devices; dopant loss; junction leakage; molecular implants; polysilicon; source/drain extension doping; Atomic beams; Boron; Electrons; Fabrication; Hydrogen; Implants; Ionization; Particle beams; Productivity; Voltage;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279961
