Title :
Rapid Thermal Scanning for Dopant Activation for Advanced Junction Technology
Author :
Yoo, Woo Sik ; Kang, Kitaek
Author_Institution :
WaferMasters Inc., San Jose
Abstract :
Rapid thermal scanning for activation of dopants is proposed for applications in advanced junction formation. The proposed rapid thermal scanning dopant activation technique was found to be very effective for both deep and shallow implanted junctions while providing enhanced activation parameter control capability.
Keywords :
ion implantation; rapid thermal annealing; semiconductor doping; semiconductor junctions; activation parameter control capability; advanced junction technology; deep implanted junctions; dopant activation; rapid thermal scanning; shallow implanted junctions; Chemical lasers; Crystallization; Electrical resistance measurement; Epitaxial growth; Implants; Lamps; Rapid thermal annealing; Rapid thermal processing; Solid lasers; Temperature;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279962
