DocumentCode :
3133421
Title :
High-Efficiency Oxide-Confined Ridge Waveguide Laser with Nearly Symmetric Output Beam
Author :
Liang, Di ; Kulick, Jason M. ; Hall, Douglas C.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN
fYear :
2006
fDate :
Oct. 2006
Firstpage :
935
Lastpage :
936
Abstract :
High-index-contrast InAlGaAs/AlGaAs ridge waveguide lasers exhibiting low threshold current and high efficiency are fabricated by a deep etch plus modified wet thermal oxidation process. A nearly-symmetric output beam is achieved for a 1.4mum wide aperture device
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; laser beams; optical fabrication; semiconductor lasers; waveguide lasers; InAlGaAs-AlGaAs; deep etch fabrication; high-index-contrast InAlGaAs-AlGaAs laser; laser efficiency; oxide-confined ridge waveguide laser; symmetric output beam; threshold current; wet thermal oxidation process; Diode lasers; Fiber lasers; Laser beams; Laser modes; Optical pumping; Optical waveguides; Oxidation; Pump lasers; Waveguide lasers; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
Type :
conf
DOI :
10.1109/LEOS.2006.279154
Filename :
4054496
Link To Document :
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