DocumentCode
3133435
Title
Native oxidation of aluminum-containing III-V compound layers for increased current and optical confinement in semiconductor lasers
Author
Fiirst, S. ; Farmer, Corrie ; Hobbs, Lois ; De La Rue, Richard ; Sorel, Marc
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ.
fYear
2006
fDate
Oct. 2006
Firstpage
937
Lastpage
938
Abstract
We demonstrate the use of submicrometer oxidized in-layer current apertures to increase laser performance, and propose this technique for the enhancement of optical and current confinement in deep etched lasers
Keywords
III-V semiconductors; aluminium; laser beams; oxidation; semiconductor lasers; aluminum-containing III-V compound layer; current confinement; deep etched laser; laser performance; native oxidation; optical confinement; oxidized in-layer current aperture; semiconductor laser; Apertures; Degradation; Etching; III-V semiconductor materials; Optical refraction; Optical variables control; Optical waveguides; Oxidation; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.279155
Filename
4054497
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