• DocumentCode
    3133451
  • Title

    Magneto-luminescence study of strain and lateral confinement effects in InAs0.48P0.52/InP quantum well wires

  • Author

    Hammersberg, J. ; Notomi, M. ; Weman, H. ; Potemski, M. ; Sugiura, Hirotaka ; Okamoto, M. ; Tamamura, T.

  • Author_Institution
    Dept. of Phys. & Meas. Technol., Linkoping Univ., Sweden
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    315
  • Lastpage
    318
  • Abstract
    Photoluminescence experiments on strained InAs0.48P0.52InP quantum wires show that the wire-width-dependent blue shift of the transition energy is much larger than the blue shift in lattice matched quantum wires. With magneto-luminescence measurements we are able to prove that lateral confinement effects only partly explain the observed blue shift. The other contribution comes from the strain energy which is wire width dependent in spite of a constant lattice-mismatch
  • Keywords
    III-V semiconductors; indium compounds; internal stresses; magneto-optical effects; photoluminescence; semiconductor quantum wires; spectral line shift; InAs0.48P0.52-InP; InAs0.48P0.52/InP quantum well wires; blue shift; energy separation; energy shift; lateral confinement effects; lattice mismatch; magneto-luminescence measurements; photoluminescence; strain energy; transition energy; wire width dependence; Capacitive sensors; Carrier confinement; Epitaxial growth; Gallium arsenide; Indium phosphide; Lattices; Magnetic confinement; Magnetic field induced strain; Semiconductor lasers; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522143
  • Filename
    522143
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3133451