Excellent quality ultra-thin oxides prepared by room temperature anodic oxidation

Author

Liu, J.S. ; Chiang, M.C. ; Chen, C.L. ; Huang, T.Y.

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

fYear

1999

fDate

1999

Firstpage

34

Lastpage

38

Abstract

In this work, we present a novel oxide grown on polysilicon by room-temperature anodic oxidation (anodic polyoxide). The anodic polyoxide exhibits excellent electrical characteristics, i.e. low leakage current, high dielectric breakdown field, high effective electron barrier height, extremely low electron trapping rate, high charge-to-breakdown, and long lifetime. These, together with its low-cost and low thermal-budget features, make it very attractive for inter-poly oxide in future high-density nonvolatile memory applications

Keywords

anodisation; dielectric thin films; electric breakdown; electron traps; integrated circuit interconnections; integrated circuit reliability; integrated memory circuits; leakage currents; oxidation; random-access storage; 20 C; Si; SiO₂-Si; anodic polyoxide; charge-to-breakdown; dielectric breakdown field; effective electron barrier height; electrical characteristics; electron trapping rate; high-density nonvolatile memory applications; inter-poly oxide; leakage current; oxide cost; oxide growth; oxide lifetime; polysilicon surface; quality; room temperature anodic oxidation; thermal-budget; ultra-thin oxides; Anodes; Cathodes; Dielectric breakdown; Electrodes; Electrons; Leakage current; Oxidation; Rapid thermal annealing; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the

Print_ISBN

0-7803-5187-8

Type

conf

DOI

10.1109/IPFA.1999.791295

Filename

791295