Title :
New approach for high-speed, high-sensitivity photodetectors
Author :
Tan, I-Hsing ; Bowers, John E. ; Hu, Evelyn L. ; Miller, B.I. ; Capik, R.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
The bandwidth-efficiency product of ultra high-speed pin photodetectors has been severely limited by the thickness of the absorbing layer, the diode RC time constant, and the parasitic capacitance from the periphery of device. In this paper, we propose and demonstrate a novel long-wavelength detector structure with a mushroom-like mesa and an air-bridged coplanar metal to significantly cut down both the diode RC constant as well as the parasitic capacitance. The quantum efficiency of this structure can be further enhanced to close to 100 % if wafer fusion is used to bond the In0.53Ga0.47-InP detector to a GaAs/AlAs quarter-wave stack (QWS), followed by deposition of a Si/SiO2 QWS to form a Fabry-Perot cavity
Keywords :
Fabry-Perot resonators; III-V semiconductors; capacitance; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; p-i-n photodiodes; photodetectors; 90 nm; 90 percent; Fabry-Perot cavity; GaAs-AlAs; GaAs/AlAs quarter-wave stack; In0.53Ga0.47-InP; In0.53Ga0.47-InP detector; Si-SiO2; Si/SiO2 QWS; air-bridged coplanar metal; bandwidth-efficiency product; diode RC constant; high-sensitivity photodetectors; high-speed; long-wavelength detector structure; mushroom-like mesa; parasitic capacitance; quantum efficiency; ultra high-speed pin photodetectors; Bandwidth; Detectors; Diodes; Fabry-Perot; Indium gallium arsenide; Indium phosphide; Parasitic capacitance; Photodetectors; Photodiodes; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522155
