• DocumentCode
    3133670
  • Title

    New approach for high-speed, high-sensitivity photodetectors

  • Author

    Tan, I-Hsing ; Bowers, John E. ; Hu, Evelyn L. ; Miller, B.I. ; Capik, R.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    The bandwidth-efficiency product of ultra high-speed pin photodetectors has been severely limited by the thickness of the absorbing layer, the diode RC time constant, and the parasitic capacitance from the periphery of device. In this paper, we propose and demonstrate a novel long-wavelength detector structure with a mushroom-like mesa and an air-bridged coplanar metal to significantly cut down both the diode RC constant as well as the parasitic capacitance. The quantum efficiency of this structure can be further enhanced to close to 100 % if wafer fusion is used to bond the In0.53Ga0.47-InP detector to a GaAs/AlAs quarter-wave stack (QWS), followed by deposition of a Si/SiO2 QWS to form a Fabry-Perot cavity
  • Keywords
    Fabry-Perot resonators; III-V semiconductors; capacitance; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; p-i-n photodiodes; photodetectors; 90 nm; 90 percent; Fabry-Perot cavity; GaAs-AlAs; GaAs/AlAs quarter-wave stack; In0.53Ga0.47-InP; In0.53Ga0.47-InP detector; Si-SiO2; Si/SiO2 QWS; air-bridged coplanar metal; bandwidth-efficiency product; diode RC constant; high-sensitivity photodetectors; high-speed; long-wavelength detector structure; mushroom-like mesa; parasitic capacitance; quantum efficiency; ultra high-speed pin photodetectors; Bandwidth; Detectors; Diodes; Fabry-Perot; Indium gallium arsenide; Indium phosphide; Parasitic capacitance; Photodetectors; Photodiodes; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522155
  • Filename
    522155