Reduction of inelastic scattering effect by introducing strain-compensated superlattice into GaInAs/GaInP multi-quantum barriers

Author

Loh, Terhoe ; Miyamoto, Tomoyuki ; Kurita, Youichiro ; Koyama, Fumio ; Iga, Kenichi

Author_Institution

Precision & Intell. Lab., Tokyo Inst. of Technol., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

373

Lastpage

376

Abstract

The effect of inelastic scattering on the electron reflection in multi-quantum barriers has been examined for the first time by using the damped resonant tunneling model. The electron reflectivity deteriorates below unity most significantly at discrete energies in the virtual barrier. The largest dip in reflectivity is about 15% for intraband relaxation time of 0.16 ps. It is also shown that this deterioration can be reduced by utilizing strain-compensated superlattice in the multi-quantum barriers

Keywords

III-V semiconductors; electron relaxation time; gallium arsenide; gallium compounds; indium compounds; interface states; quantum interference phenomena; semiconductor superlattices; surface scattering; tunnelling; 0.16 ps; GaInAs-GaInP; GaInAs/GaInP multi-quantum barriers; damped resonant tunneling model; electron reflection; electron reflectivity; inelastic scattering effect; intraband relaxation time; reflectivity; strain-compensated superlattice; virtual barrier; Electrons; Indium phosphide; Optical scattering; Particle scattering; Quantum well lasers; Reflectivity; Resonance light scattering; Resonant tunneling devices; Semiconductor lasers; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522157

Filename

522157