DocumentCode
3133989
Title
In0.52(Al0.9Ga0.1)0.48 As/In0.53Ga0.4$ d7As HEMTs on InP substrates
Author
Wu, Chia-Song ; Chan, Yi-Jen ; Gan, Tien-Huat ; Shieh, Jia-Lin ; Chyi, Jen-Inn
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fYear
1995
fDate
9-13 May 1995
Firstpage
412
Lastpage
415
Abstract
In this report, we try to improve the quality of the In0.52 Al0.48As layer, by substituting 10% of Al atoms with Ga atoms, and forming a In0.52(Al0.9Ga0.1) 0.48As quaternary (Q) layer. This quaternary InAlGaAs layer is used as the Schottky and buffer layers in HEMT structures. With the incorporation of Ga atoms, the alloy scattering can be eliminated due to the higher surface mobility of Ga atoms during MBE growth. This composition is chosen based on the consideration of maintaining a good Schottky gate performance, where a reasonably high bandgap Schottky layer is necessary. Since it is expected that this InAlGaAs Q-layer can improve the device duality, we particularly focus on reliability and sidegate testing for InAlGaAs Q-HEMTs. For comparison, the results obtained from the conventional InP-HEMTs are also included
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; molecular beam epitaxial growth; semiconductor device reliability; semiconductor device testing; semiconductor growth; 35 GHz; DC I-V characteristics; HEMT structures; In0.52(Al0.9Ga0.1)0.48 As; In0.52(Al0.9Ga0.1)0.48 As quaternary layer; In0.52(Al0.9Ga0.1)0.48 As/In0.53Ga0.47As HEMTs; In0.52Al0.48As layer quality; In0.53Ga0.47As; InP; InP substrates; MBE growth; Schottky gate performance; Schottky layer; alloy scattering elimination; buffer layer; drain source current; gate leakage current; high bandgap Schottky layer; microwave characteristics; reliability; sidegate testing; surface mobility; Buffer layers; Frequency; HEMTs; Indium phosphide; Light sources; MODFETs; Optical device fabrication; Optical devices; Optical saturation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522167
Filename
522167
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