InGaAs insulated gate field effect transistors using silicon interlayer based passivation technique

Author

Suzuki, S. ; Kodama, S. ; Tomozawa, H. ; Hasegawa, H.

Author_Institution

Res. Center for Interface Quantum Electronics, Hokkaido Univ., Sapporo, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

436

Lastpage

439

Abstract

The purpose of this paper is to investigate the applicability of the Si interface control layer (ICL) based passivation technique to construction of InGaAs insulated gate field effect transistor (IGFET) devices such as MISFETs and HEMTs. HF treatment were applied to InGaAs and InAlAs surfaces. Basic insulator-semiconductor structures were fabricated and characterized by XPS, I-V and MIS C-V techniques. Fat MISFETs and HEMTs were also fabricated and the feasibility of the present technique is successfully demonstrated

Keywords

III-V semiconductors; MIS capacitors; MISFET; X-ray photoelectron spectra; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; interface states; passivation; semiconductor technology; silicon; surface treatment; HEMTs; HF treatment; I-V characteristics; InGaAs insulated gate field effect transistors; InP; MIS C-V techniques; MIS capacitor structures; Si interface control layer; Si interlayer based passivation; XPS; fat MISFETs; insulator-semiconductor structures; FETs; HEMTs; Hafnium; Indium compounds; Indium gallium arsenide; Insulation; MISFETs; MODFETs; Passivation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522173

Filename

522173