1.3 μm GaInAsP/InP square buried heterostructure vertical cavity surface emitting laser grown by all MOCVD

Author

Uchiyama, S. ; Kashiwa, S.

Author_Institution

RWCP, Yokohama, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

488

Lastpage

491

Abstract

In order to improve a buried heterostructure (BH) for GaInAsP/InP vertical cavity surface emitting laser (VCSEL) regrown by MOCVD, we have introduced a square mesa top pattern, of which side was at angle of 450 to <011> direction. A 1 μm GaInAsP/InP square buried heterostructure (SBH) VCSEL with this mesa structure has been demonstrated and low threshold CW oscillation (threshold current I_th=0.45 mA) at 77 K and low threshold room temperature pulsed oscillation (I_th=12 mA) were obtained

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 0.45 mA; 1.3 mum; 12 mA; 77 K; GaInAsP-InP; GaInAsP/InP square buried heterostructure vertical cavity surface emitting laser; VCSEL; all MOCVD; low threshold CW oscillation; low threshold room temperature; mesa structure; pulsed oscillation; square mesa top pattern; threshold current; Etching; Fiber lasers; Indium phosphide; Laser modes; MOCVD; Mirrors; Optical fiber testing; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522186

Filename

522186