Study of P type doping in AlGaInP cladding layer of high brightness red LED

Author

Lin-chun Gao ; Jun Deng ; Shao-jun Luo ; Rui Chen ; Jian-jun Li ; Jun Han

Author_Institution

Key Lab. of Opto-Electron. Technol., Beijing Univ. of Technol., Beijing, China

fYear

2010

fDate

3-6 Dec. 2010

Abstract

The substrate angle and impurity flow restrictions on doping concentration of P-type AlGaInP cladding layer have been studied by using ECV( Electrochemical Capacitance Voltage) measurement. The experimental results show that the angle of 15° to the substrate than 2° is easier to achieve high doping concentration with Mg impurity at the same condition, furthermore, the doping concentration increase with increasing the doping flows while the source flows of Mg between 7.5 sccm-30 sccm. The performances of the HB red LED are improved based on the optimized the condition of the epitaxial growth of Ptype AlGaInP cladding layer.

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; claddings; doping profiles; epitaxial growth; gallium compounds; light emitting diodes; magnesium; semiconductor doping; AlGaInP:Mg; cladding layer; doping concentration; electrochemical capacitance voltage measurement; epitaxial growth; high brightness red LED; impurity flow restriction; p-type doping; substrate angle; Doping; Gallium arsenide; Impurities; Light emitting diodes; MOCVD; Substrates; ECV; Doping flow; P-type AlGaInP cladding layer; Substrate angle;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS

Conference_Location

Guangzhou

Print_ISBN

978-1-4244-8393-8

Electronic_ISBN

978-1-4244-8393-8

Type

conf

DOI

10.1109/AOM.2010.5767156

Filename

5767156