High-efficiency monolithic InGaP/GaAs tandem solar cells with improved top-cell back-surface-field layers

Author

Kurita, H. ; Takamoto, T. ; Ikeda, E. ; Ohmori, M.

Author_Institution

Central Res. Lab., Japan Energy Corp., Saitama, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

516

Lastpage

519

Abstract

Improved back-surface-field (BSF) layers have been adapted for the top cell of a two-terminal, monolithic InGaP/GaAs dual-junction cell in order to recover the top-cell quantum efficiency, which had been reduced significantly by the diffusion of zinc from the p⁺-InGaP BSF into the top-cell base layer. A thick p⁺-InGaP layer and a thin p-AlInP layer have proved to be effective in improving the top-cell quantum efficiency, especially in the long-wavelength region. Although the current-matching between the top- and bottom-cells was not complete, tandem cells with those BSF layers obtained high conversion efficiencies of 27.3% and 26.4%, respectively

Keywords

III-V semiconductors; diffusion; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; solar cells; 26.4 percent; 27.3 percent; AlInP; InGaP-GaAs; back-surface-field layers; current-matching; diffusion; high conversion efficiencies; high-efficiency monolithic InGaP/GaAs tandem solar cells; long-wavelength region; monolithic InGaP/GaAs dual-junction cell; p⁺-InGaP BSF; tandem cells; thick p⁺-InGaP layer; thin p-AlInP layer; top-cell back-surface-field layers; top-cell base layer; top-cell quantum efficiency; two-terminal; Charge carrier lifetime; Diodes; Doping; Electrons; Gallium arsenide; Life estimation; Photonic band gap; Photovoltaic cells; Spontaneous emission; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522193

Filename

522193