Title :
Temperature dependence of InGaAsP electro-absorption modulator module
Author :
Tanaka, Hideaki ; Horita, Masayoshi ; Matsushima, Yuichi
Author_Institution :
KDD Kamifukuoka R&D Labs., Saitama, Japan
Abstract :
We have investigated the temperature and wavelength dependence of the electroabsorption modulator module. Thermal stability of the module was very high. Controllability of the driving voltage has been demonstrated by changing the module temperature. The optimum Eg at 20°C has been estimated to be 48-55 meV, in consideration of small insertion loss and low driving voltage
Keywords :
III-V semiconductors; deformation; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical losses; 20 C; 48 to 55 meV; InGaAsP; InGaAsP electro-absorption modulator module; driving voltage; electroabsorption modulator module; low driving voltage; module temperature; optimum Eg; small insertion loss; temperature dependence; thermal stability; wavelength dependence; High speed optical techniques; Insertion loss; Laser stability; Optical fiber polarization; Optical modulation; Optical solitons; Packaging; Photonic band gap; Temperature dependence; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522199
