DocumentCode
3134820
Title
Silicon MEMS packages for coplanar MMICs
Author
Kim, Sung-Jin ; Kwon, Young-soo ; Lee, Hai-Young
Author_Institution
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
fYear
2000
fDate
2000
Firstpage
664
Lastpage
667
Abstract
The MEMS package using a common resistivity silicon (1~30 Ω-Cm) carrier for coplanar MMICs is proposed in order to reduce coplanar parasitic problems of leakage, coupling and resonance. The proposed carrier scheme is verified by fabricating and measuring GaAs CPWs on the three types of Si-carriers (Gold-plated carrier, 15 Ω-Cm Si-carrier, HRS carrier) in the frequency from 0.5 to 40 GHz. The proposed MEMS package using the 15 Ω-Cm Si-carrier shows parasitic-free performance since the lossy Si-carrier effectively absorbs and suppresses the parasitic leakage
Keywords
III-V semiconductors; MMIC; coplanar waveguide components; elemental semiconductors; gallium arsenide; integrated circuit packaging; micromechanical devices; silicon; 0.5 to 40 GHz; GaAs; GaAs CPW; HRS carrier; MEMS package; Si; common resistivity silicon carrier; coplanar MMIC; gold-plated carrier; parasitic coupling; parasitic leakage; parasitic resonance; Conductivity; Coplanar waveguides; Costs; Frequency; Gold; MMICs; Micromechanical devices; Millimeter wave communication; Packaging; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000 Asia-Pacific
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6435-X
Type
conf
DOI
10.1109/APMC.2000.925920
Filename
925920
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