DocumentCode
3134880
Title
Type 1.5 coupled quantum wells for electroabsorption modulation with low electric fields
Author
Sahara, Richard T. ; Matsuda, M. ; Morito, K. ; Soda, H.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1995
fDate
9-13 May 1995
Firstpage
547
Lastpage
550
Abstract
A new quantum structure is proposed, the type 1.5 quantum well, which can be designed to modulate the optical transition oscillator strength with a very low field. The peaking of the oscillator strength and absorption with a low applied field is a practical advantage for modulator applications to reduce the drive voltage and increase the maximum absorption
Keywords
band structure; electro-optical modulation; electroabsorption; optical design techniques; oscillator strengths; semiconductor quantum wells; drive voltage; electroabsorption modulation; low applied field; low electric fields; maximum absorption; modulator applications; optical transition oscillator strength modulation; oscillator strength peaking; quantum structure; type 1.5 coupled quantum wells; very low field; Absorption; Charge carrier processes; Indium phosphide; Laboratories; Optical design; Optical device fabrication; Optical materials; Optical modulation; Voltage-controlled oscillators; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522201
Filename
522201
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