Intersubband transitions in conduction band quantum wells: the role of energy band gaps and band off-sets

Author

Peng, Lung-Han ; Fonstad, Clifton G., Jr.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

555

Lastpage

556

Abstract

A new 14-band k·p analysis of optical intersubband transitions in conduction band quantum wells demonstrates the importance of the energy band gap and the band off-sets in determining the strength of such transitions, In particular it is found (1) that a narrow band gap enhances the TE activity, and is therefore desirable, because of the importance of band mixing, and (2) that carrier confinement in both the valence band (Type I quantum well) and the upper conduction band is necessary for strong TE activity. This paper discusses these observations and supports these conclusions with measurements made on Type-II InP/InAlAs quantum wells

Keywords

conduction bands; energy gap; k.p calculations; semiconductor quantum wells; InP-InAlAs; TE activity; band mixing; band off-sets; carrier confinement; conduction band quantum wells; energy band gaps; k·p analysis; optical intersubband transitions; Absorption; Charge carrier processes; Energy measurement; Indium compounds; Indium phosphide; Infrared spectra; Quantum well devices; Substrates; Temperature; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522203

Filename

522203