Title :
SiGe technologies for the new information society
Author :
Regis, M. ; Bary, L. ; Coustou, A. ; Sadowy, J. ; Tournier, E. ; Borgarino, M. ; Llopis, O. ; Graffeuil, J. ; Plana, R.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
This paper presents an overview on the SiGe technology that could be used to design future communications systems. Both bipolar and unipolar technologies are available. Nevertheless bipolar technology is very successful in term of noise, linearity power and reliability and will outperform III-V devices for applications at least up to 20 GHz
Keywords :
Ge-Si alloys; MIMIC; MMIC; bipolar integrated circuits; integrated circuit technology; microwave transistors; millimetre wave transistors; multimedia communication; reviews; semiconductor materials; EHF; SHF; SiGe; SiGe technology; bipolar technology; communication systems application; multimedia applications; unipolar technology; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Linearity; Navigation; Silicon germanium; Switches; US Department of Transportation; Wireless LAN;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925942
