Single stage amplifiers on a CMOS grade silicon substrate using a polymer interlayer dielectric with strained silicon MOSFETs

Author

Ternent, G. ; Edgar, D.L. ; McLelland, H. ; Williamson, F. ; Ferguson, S. ; Kaya, S. ; Wilkinson, C.D.W. ; Thayne, I.G. ; Fobelets, K. ; Hampson, J.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2000

fDate

2000

Firstpage

767

Lastpage

770

Abstract

The design of single stage amplifiers based on a metal gate Si-SiGe MOSFET process on a 1 ohm.cm silicon substrate is presented. The amplifier design is based on 0.3 μm gate length MOSFETs with f_T of 19.9 GHz and f_max 21 GHz integrated with low loss coplanar waveguide transmission lines and high quality factor spiral inductors realised on a 15 μm thick polymer dielectric. The performance of the amplifier, currently in fabrication, is presented

Keywords

Ge-Si alloys; MMIC amplifiers; MOS analogue integrated circuits; Q-factor; coplanar waveguides; dielectric thin films; elemental semiconductors; field effect MMIC; inductors; integrated circuit design; polymer films; semiconductor materials; silicon; 0.3 micron; 15 micron; 4 to 21 GHz; CMOS grade Si substrate; NMOSFET; Si; Si-SiGe; coplanar waveguide transmission lines; high Q-factor spiral inductors; low loss CPW transmission lines; metal gate Si/SiGe MOSFET process; n-MOSFET; n-channel MOSFETs; polymer interlayer dielectric; quality factor; single stage amplifiers; spin-on dielectric process; strained Si MOSFETs; Coplanar transmission lines; Coplanar waveguides; Dielectric losses; Inductors; MOSFET circuits; Polymers; Propagation losses; Q factor; Silicon; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925945

Filename

925945