• DocumentCode
    3135213
  • Title

    30 GHz active mixer in a Si/SiGe bipolar technology

  • Author

    Wurzer, Martin ; Meister, Thomas F. ; Hackl, Sabine ; Knapp, Herbert ; Treitinger, Ludwig

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    780
  • Lastpage
    782
  • Abstract
    In this paper we present a 30 GHz active mixer fabricated in a 80 GHz fT silicon-germanium bipolar technology. It is based on a Gilbert cell and is capable of broadband operation down to DC. The mixer draws 2 mA from a single supply voltage of 4.9 V. It shows a conversion gain of more than 5.9 dB up to 30 GHz and a double-sideband noise figure of better than 10.2 dB up to 18 GHz
  • Keywords
    Ge-Si alloys; MMIC mixers; bipolar MIMIC; bipolar MMIC; elemental semiconductors; integrated circuit noise; millimetre wave mixers; semiconductor materials; silicon; 10.2 dB; 18 to 80 GHz; 2 mA; 30 GHz; 4.9 V; 5.9 dB; Gilbert cell; Si-SiGe; Si/SiGe bipolar technology; active mixer; broadband operation; single supply voltage; Circuits; Frequency conversion; Frequency measurement; Germanium silicon alloys; Noise figure; Postal services; Semiconductor device measurement; Silicon germanium; Ultrasonic variables measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000 Asia-Pacific
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    0-7803-6435-X
  • Type

    conf

  • DOI
    10.1109/APMC.2000.925948
  • Filename
    925948
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3135213