Title :
Improvement of resistivity of phosphorous nitride films deposited at 100°C on InP substrate
Author :
Matsumoto, Y. ; Suzuki, T. ; Haga, K. ; Sasaki, H. ; Sakuma, M. ; Hanajiri, Tatsuro ; Sugano, T. ; Katoda, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyo Univ., Saitama, Japan
Abstract :
Phosphorous nitride (PN) films were deposited on InP as gate-insulator films at 100°C by photon-assisted chemical vapor deposition (PACVD) method using PCl3 and NH3 as source gasses, and their electrical and optical properties were investigated. The electrical leakage resistance of PN films was found to depend on the amount of phosphorous within PN films which was changed by the ratio of source gases (PCl3/NH3). As a result, even at 100°C, PN films with resistivity of about 109-10 10 Ω·cm under high electric field (1 MV/cm) were obtained without post deposition annealing by optimizing the source gas ratio
Keywords :
III-V semiconductors; MIS devices; MIS structures; chemical vapour deposition; chemical variables control; electrical resistivity; indium compounds; leakage currents; phosphorus compounds; semiconductor-insulator boundaries; 100 C; 109 to 1010 ohm; 133 Pa; 60 to 120 min; I-V characteristics; III-V semiconductor; InP-PN; MIS devices; MIS diodes; PCl3-NH3; XPS; deposition rate control; electrical properties; gate-insulator films; high electric field; leakage resistance; nitride films; optical properties; photon-assisted chemical vapor deposition; resistivity improvement; source gas ratio; Conductive films; Conductivity; Diodes; Indium phosphide; Leakage current; Light sources; Optical films; Particle beam optics; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522217
