Fabrication of 60 nm-pitch ordered InP pillars by EB-lithography and anodization

Author

Takizawa, T. ; Nakahara, M. ; Kikuno, E. ; Arai, S.

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

628

Lastpage

631

Abstract

We obtained 60 nm-pitch ordered InP triangle vertical pillars with high density of around 50% by combining electron-beam (EB) lithography and anodization techniques. Furthermore, adopting the dry-etching transfer onto SiO₂, we obtained 40 nm-pitch ordered pillars and observed photoluminescence intensity comparable to that from bulk InP substrate that indicates negligible non-radiative recombination

Keywords

III-V semiconductors; anodisation; electron beam lithography; indium compounds; masks; nanotechnology; photoluminescence; semiconductor quantum wires; sputter etching; 60 nm; III-V semiconductor; InP; SiO₂; anodization; dot patterned mask; dry-etching transfer; electron-beam lithography; fabrication; high density; nanotechnology; ordered pillars; photoluminescence intensity; quantum wires; size-ordered pillars; triangle vertical pillars; Etching; Fabrication; Indium phosphide; Lithography; Optical buffering; Optical devices; Optical films; Quantum well devices; Resists; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522222

Filename

522222