DocumentCode :
3135560
Title :
New level of accuracy in TIM measurements
Author :
Vass-Varnai, Andras ; Szekely, Vladimir ; Sarkany, Zoltan ; Rencz, Marta
Author_Institution :
Mech. Anal. Div., Mentor Graphics Hungary Ltd., Budapest, Hungary
fYear :
2011
fDate :
20-24 March 2011
Firstpage :
317
Lastpage :
324
Abstract :
The thermal management of semiconductor devices and systems has become a widely discussed topic over the past decades due to the ever increasing integration and the resulting power densities inside the packages. The increasing junction temperature is a great threat for the operation and the long-term reliability of the packaged device. One of the most important barriers in the heat conduction path is the thermal interface material. Their thermal performance significantly influences the overall thermal resistance of a system from the junction to the ambient. In this paper two approaches are described for the accurate thermal conductivity measurement of these materials; both techniques were developed in the framework of the European Nanopack project. One of them is a highly accurate, scientific method which benefits from the improvements of the semiconductor industry: the TIM is measured between two bare sensor chip surfaces. The other method is based on thermal transient testing and allows the measurement of a given grease or paste in its real environment. Both of them are capable of the measurement of highly conductive, nanoparticle based TIM materials. In this paper these two methods are explained in more details and measured results are compared with each-other. The effect of the measurement arrangement on the measured thermal resistance values is also discussed.
Keywords :
semiconductor device packaging; semiconductor device reliability; thermal conductivity measurement; thermal management (packaging); thermal resistance; transient analysis; TIM measurements; heat conduction path; junction temperature; packaged device reliability; semiconductor devices; semiconductor industry; thermal conductivity measurement; thermal interface material; thermal management; thermal resistance; thermal transient testing; Electrical resistance measurement; Heating; Materials; Semiconductor device measurement; Temperature measurement; Thermal resistance; Thermal conductivity; Thermal interface materials; Thermal transient testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2011 27th Annual IEEE
Conference_Location :
San Jose, CA
ISSN :
1065-2221
Print_ISBN :
978-1-61284-740-5
Type :
conf
DOI :
10.1109/STHERM.2011.5767218
Filename :
5767218
Link To Document :
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