Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design

Author

Samelis, A. ; Pavlidis, D. ; Séjalon, F. ; Chandrasekhar, S. ; Lunardi, L.M.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

648

Lastpage

651

Abstract

A large-signal model suitable for InP/InGaAs HBTs was developed. Breakdown effects have been incorporated into the Gummel-Poon formulation. The new model was validated by comparisons with on-wafer power measurements. The characteristics of two transimpedance amplifiers of different design were studied using the large-signal models developed for InP/InGaAs HBTs. The analysis showed that circuit characteristics can be modified under large-signal operation. Transimpedance degradation and pronounced self-bias can, for example, take place and these depend on the type of OEIC. Large-signal modeling should therefore be considered for accurate OEIC design

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; preamplifiers; semiconductor device models; Gummel-Poon model; HBTs; InP-InGaAs; OEIC; breakdown; heterojunction bipolar transistors; large-signal characteristics; nonlinear characteristics; on-wafer power measurements; optoelectronic preamplifier design; self-bias; transimpedance amplifiers; Analytical models; Breakdown voltage; Circuit simulation; Current measurement; Diodes; Electric breakdown; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling; Laboratories;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522227

Filename

522227