Optimized Germanium co-implant with B2H6 PLAD for better advanced PMOS device performance

Author

Liu, Jennifer Lequn ; Qin, Shu ; Hu, Jeff ; McTeer, Allen

Author_Institution

Micron Technol., Inc., Boise, ID, USA

fYear

2011

fDate

22-22 April 2011

Firstpage

1

Lastpage

3

Abstract

The following abstracts are given: Optimized Germanium Co-Implant with B2H6 PLAD for Better Advanced PMOS Device Performance; Design of low noise CMOS charge pump with adjustable output voltage and adjustable power; Measurement and Simulation of Various Geometries of LTCC Electron Hop Funnels; Efficient Design and Synthesis of Decimation Filters for Wideband Delta-Sigma ADCs; A Novel Material Solution for Non Volatile Contact Bridge Memristive Memory Fabrication; Radiation induced effects in pure and Ag doped Ge-Se films; and Design Techniques for a 70 Gbps CMOS Multiplexer.

Keywords

CMOS integrated circuits; Ge-Si alloys; MOS integrated circuits; SPICE; ceramic packaging; delta-sigma modulation; germanium; multiplexing equipment; random-access storage; silver; Ag doped Ge-Se films; B₂H₆ PLAD; CMOS multiplexer; LTCC electron hop funnels; PMOS device performance; decimation filters; low noise CMOS charge pump; nonvolatile contact bridge memristive memory fabrication; optimized germanium co-implant; radiation induced effects; wideband delta-sigma ADC; CMOS integrated circuits; Computers; Glass; Implants; Silver; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices (WMED), 2011 IEEE Workshop on

Conference_Location

Boise, ID

ISSN

1947-3834

Print_ISBN

978-1-4244-9740-9

Type

conf

DOI

10.1109/WMED.2011.5767280

Filename

5767280