Novel poly-Si/Al/sub 2/O/sub 3//poly-Si capacitor for high density DRAMs

Author

Yeong Kwan Kim ; Sang Min Lee ; In Seen Park ; Chang Soo Park ; Sang In Lee ; Moon Yong Lee

Author_Institution

Semiconductor R&D Center, Samsung Electron. Co. Ltd., Yongin-City, South Korea

fYear

1998

fDate

9-11 June 1998

Firstpage

52

Lastpage

53

Abstract

A poly-Si/Al/sub 23//poly-Si capacitor is developed for the simple integration of 256 Mb DRAM and beyond. The oxide equivalent thickness (T/sub oxeq/) was achieved as small as 28 /spl Aring/, which corresponds to the capacitance of 26.8 fF/cell in 256 Mb DRAM with 0.26 /spl mu/m feature size. One of the distinguished characteristics of Al/sub 2/O/sub 3/ capacitor is that the capacitance was even enhanced by performing the conventional DRAM processes, including high temperature planarization known as BPSG flow, without degrading the leakage characteristics.

Keywords

DRAM chips; alumina; capacitors; surface treatment; 0.26 micron; 256 Mbit; 26.8 fF; BPSG flow; Si-Al/sub 2/O/sub 3/-Si; capacitance; high density DRAM; high temperature planarization; leakage characteristics; oxide equivalent thickness; poly-Si/Al/sub 2/O/sub 3//poly-Si capacitor; Amorphous materials; Capacitance; Capacitance-voltage characteristics; Capacitors; Electrodes; Material storage; Optical films; Random access memory; Refractive index; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689195

Filename

689195