Reliability of AlInAs/InGaAs/InP HEMT with WSi ohmic contacts

Author

Sasaki, H. ; Yajima, K. ; Yoshida, N. ; Ishihara, O. ; Mitsui, S.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

745

Lastpage

749

Abstract

We have obtained extremely high reliability on the AlInAs/InGaAs/InP HEMT using WSi ohmic electrodes. The WSi electrode of this device demonstrates high stability under a high temperature (Ta=170~200°C) operating life test. The sample analyzed by a cross-sectional TEM/EDX shows no degradation of the WSi/InGaAs interface, on the other hand, titanium (Ti) and fluorine (F) are detected in the AlInAs layer. The estimated degradation mechanism of this device is related with decrease of carrier concentration in the epitaxial layer

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; indium compounds; life testing; ohmic contacts; semiconductor device metallisation; semiconductor device reliability; semiconductor device testing; transmission electron microscopy; tungsten compounds; 170 to 200 C; AlInAs-InGaAs-InP; AlInAs/InGaAs/InP HEMT; WSi ohmic contacts; WSi-InGaAs; WSi/InGaAs interface; cross-sectional TEM/EDX; degradation mechanism; epitaxial layer carrier concentration; high reliability; high stability; high temperature operating life test; ohmic electrodes; Degradation; Electrodes; HEMTs; Indium gallium arsenide; Indium phosphide; Life testing; Ohmic contacts; Stability; Temperature; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522251

Filename

522251