DocumentCode
3136289
Title
Selective MBE growth of InGaAs and InAlAs on high-index facets and its application to fabrication of
Author
Fujikura, H. ; Hasegawa, H.
fYear
1995
fDate
9-13 May 1995
Firstpage
755
Keywords
Fabrication; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Quantum mechanics; Scanning electron microscopy; Substrates; Temperature; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522253
Filename
522253
Link To Document