DocumentCode
3136338
Title
A novel ultra-wideband 90 degrees GaAs MMIC phase shifter with either analogue or digital control
Author
Dai, Yong-sheng ; Chen, Tang-Sheng
Author_Institution
Nanjing Electron Devices Inst., China
fYear
2000
fDate
2000
Firstpage
1081
Lastpage
1084
Abstract
Design, fabrication and characterization of a novel ultra-wideband, GaAs MMIC digital/analogue compatible 90° phase shifter is described over 5 to 20 GHz band. The topology was specifically selected to minimize process variations on performance. Low peak phase error, PPE (<5 degree), low VSWR (<1.5), low insertion loss variations (<3.0±0.6 dB) and good phase shift linearity with the control voltage of MESFET´s gates for analogous state are exhibited over 5 to 20 GHz frequency range. The chip size of the MMIC phase shifter is 4.2 mm×0.56 mm×0.1 mm
Keywords
III-V semiconductors; MESFET integrated circuits; MMIC phase shifters; field effect MMIC; gallium arsenide; 3.0 dB; 5 to 20 GHz; GaAs; VSWR; analogue control; circuit topology; digital control; insertion loss; linearity; peak phase error; ultra-wideband GaAs MESFET MMIC phase shifter; Error correction; Fabrication; Gallium arsenide; Insertion loss; Linearity; MMICs; Phase shifters; Topology; Ultra wideband technology; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000 Asia-Pacific
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6435-X
Type
conf
DOI
10.1109/APMC.2000.926016
Filename
926016
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