Title :
A modified BSIM 0.35 μm MOSFET RF large-signal model for microwave circuit application
Author :
Hsiao, Chao-Chih ; Kuo, Ching-wei ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
A modified 0.35 μm gate-length MOSFET RF large signal model based on BSIM3v3 is presented in this report. The RF large signal model includes a BSIM3v3 model, and some passive components to simulate the device DC and RF characteristics. The added parasitic components are scaleable versus the device gate-width. A 2.4 GHz CMOS MMIC oscillator has been demonstrated based on these active models and on chip passive components
Keywords :
CMOS analogue integrated circuits; MMIC oscillators; MOSFET; semiconductor device models; 0.35 micron; 2.4 GHz; BSIM3v3; CMOS MMIC oscillator; DC characteristics; MOSFET; RF characteristics; RF large-signal model; active model; microwave circuit; on-chip passive component; parasitic component; CMOS technology; Chaotic communication; MMICs; MOSFET circuits; Microwave circuits; Oscillators; Parasitic capacitance; RF signals; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.926023
