Low noise amplifier using electromagnetic simulator at U-NII frequency band

Author

Kim, Hak-sung ; Kim, Cheol-su ; Kim, Nam-Young

Author_Institution

Dept. of Electron. Eng., Kwangwoon Univ., Seoul, South Korea

fYear

2000

fDate

2000

Firstpage

1143

Lastpage

1146

Abstract

In this paper, the purposed method of low noise amplifier (LNA) has considered choke, dc block, and matching networks with a microstrip transmission line which are analysed by the EM simulator. The ATF36077 pHEMT device is applied to design LNA for U-NII frequency band (5 GHz-6 GHz). The matching networks have designed by the only open ended stub in order to reduce parasitic effects is generated from a via structure. Through EM simulator, the simulation result shows that the linear gain (@5.5 GHz) is an over 10 dB, input/output return loss (@5.5 GHz) are a below -10 dB and the 3rd order intercept point is about 17 dBm

Keywords

HEMT circuits; circuit simulation; microstrip circuits; microwave amplifiers; -10 dB; 10 dB; 5 to 6 GHz; ATF36077; DC block; PHEMT device; U-NII frequency band; choke; electromagnetic simulation; linear gain; low noise amplifier; matching network; microstrip transmission line; open ended stub; parasitic effects; return loss; third order intercept point; via structure; Capacitors; Circuit simulation; Coupling circuits; Distributed parameter circuits; Electromagnetic interference; Inductors; Low-noise amplifiers; Microstrip; Radio frequency; Radiofrequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.926032

Filename

926032