Title :
Low noise amplifier using electromagnetic simulator at U-NII frequency band
Author :
Kim, Hak-sung ; Kim, Cheol-su ; Kim, Nam-Young
Author_Institution :
Dept. of Electron. Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
In this paper, the purposed method of low noise amplifier (LNA) has considered choke, dc block, and matching networks with a microstrip transmission line which are analysed by the EM simulator. The ATF36077 pHEMT device is applied to design LNA for U-NII frequency band (5 GHz-6 GHz). The matching networks have designed by the only open ended stub in order to reduce parasitic effects is generated from a via structure. Through EM simulator, the simulation result shows that the linear gain (@5.5 GHz) is an over 10 dB, input/output return loss (@5.5 GHz) are a below -10 dB and the 3rd order intercept point is about 17 dBm
Keywords :
HEMT circuits; circuit simulation; microstrip circuits; microwave amplifiers; -10 dB; 10 dB; 5 to 6 GHz; ATF36077; DC block; PHEMT device; U-NII frequency band; choke; electromagnetic simulation; linear gain; low noise amplifier; matching network; microstrip transmission line; open ended stub; parasitic effects; return loss; third order intercept point; via structure; Capacitors; Circuit simulation; Coupling circuits; Distributed parameter circuits; Electromagnetic interference; Inductors; Low-noise amplifiers; Microstrip; Radio frequency; Radiofrequency integrated circuits;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.926032
