DocumentCode :
3136633
Title :
Ka-band monolithic GaAs PHEMT circuits for transceiver applications
Author :
Lien, Chun Hsien ; Deng, Kuo Liang ; Liu, Chieh Chao ; Chou, Hua Shan ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2000
fDate :
2000
Firstpage :
1171
Lastpage :
1174
Abstract :
This paper presents the development of Ka-band circuits for transceiver applications including a low noise amplifier (LNA), a medium power amplifier (PA), a voltage-controlled oscillator (VCO), and a mixer. These monolithic microwave/millimeter-wave integrated circuits (MMICs) are fabricated with a 0.2-μm pseudomorphic (PM) GaAs-based HEMT technology, carried out by commercially available foundry. The LNA demonstrated a measured small signal gain of from 30 to 40 GHz of 17 dB and flat gain is observed. The PA showed a measured small signal gain 15 dB at 31 GHz. The VCO demonstrated a measured output power 11 dBm at 34.3 GHz, and mixer has a measured conversion loss 10.5 dB. Due to fabrication with the commercial foundry process, these MMICs have the potential for mass production
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC mixers; MMIC oscillators; MMIC power amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; integrated circuit noise; millimetre wave amplifiers; millimetre wave mixers; millimetre wave oscillators; millimetre wave power amplifiers; transceivers; voltage-controlled oscillators; 0.2 micron; 10.5 dB; 15 dB; 17 dB; 30 to 40 GHz; EHF; GaAs; GaAs PHEMT circuits; Ka-band monolithic PHEMT circuits; LNA; MMIC; SHF; VCO; commercial foundry process; low noise amplifier; mass production potential; medium power amplifier; mixer; monolithic MM-wave integrated circuits; pseudomorphic HEMT technology; transceiver applications; voltage-controlled oscillator; Foundries; Gain measurement; Gallium arsenide; Integrated circuit measurements; Low-noise amplifiers; MMICs; PHEMTs; Power measurement; Transceivers; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
Type :
conf
DOI :
10.1109/APMC.2000.926039
Filename :
926039
Link To Document :
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