Femtosecond semiconductor optoelectronic devices for ultrahigh throughput optical communications systems

Author

Wadu, O.

Author_Institution

FESTA Labs., Femtosecond Technol. Res. Assoc., Tsukuba

fYear

1999

fDate

1999

Firstpage

39

Lastpage

43

Abstract

Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of network throughput to enter the 1 Tb/s to 10 Tb/s range. A variety of ultrafast phenomena in InP-based semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical communication and signal-processing systems and devices necessary for them. Recent advances in the development of ultrafast semiconductor-based optoelectronic devices, such as ultrashort pulse lasers and ultrafast all-optical switches, are described

Keywords

III-V semiconductors; high-speed optical techniques; indium compounds; optical communication equipment; optical switches; semiconductor lasers; 1 to 10 Tbit/s; InP; all-optical switch; femtosecond semiconductor optoelectronic device; signal processing; throughput; ultrafast optical communication network; ultrashort pulse laser; Optical devices; Optical fiber communication; Optical signal processing; Optical wavelength conversion; Optoelectronic devices; Semiconductor lasers; Space technology; Throughput; Ultrafast electronics; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791583

Filename

791583