• DocumentCode
    3137833
  • Title

    Transmission electron microscopy determination of quantum dot profile

  • Author

    Liao, X.Z. ; Zou, J. ; Duan, X.F. ; Cockayne, D.J.H. ; Leon, R. ; Lobo, C.

  • Author_Institution
    Sydney Univ., NSW, Australia
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    106
  • Lastpage
    108
  • Abstract
    Investigation of the morphology of buried and unburied Inx Ga1-xAs/GaAs quantum dots (QDs) has been carried out using cross-section transmission microscopy and the [001] on-zone bright-field technique with image simulation. The study shows that both the buried and unburied QDs are lens-shaped
  • Keywords
    III-V semiconductors; buried layers; gallium arsenide; indium compounds; interface structure; semiconductor quantum dots; transmission electron microscopy; InGaAs-GaAs; [001] on-zone bright-field technique; buried InxGa1-xAs/GaAs quantum dots; cross-sectional TEM; image simulation; lens-shaped QDs; morphology; quantum dot profile; transmission electron microscopy; unburied InxGa1-xAs/GaAs quantum dots; Analytical models; Capacitive sensors; Diffraction; Gallium arsenide; Lenses; Optical materials; Quantum dots; Shape; Transmission electron microscopy; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    0-7803-4513-4
  • Type

    conf

  • DOI
    10.1109/COMMAD.1998.791594
  • Filename
    791594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3137833