Title :
Far-infrared laser generation from an optically pumped single quantum well structure
Author :
Green, T.J. ; Xu, W.
Author_Institution :
Dept. of Mater. Eng., Wollongong Univ., NSW, Australia
Abstract :
An optically pumped far-infrared (FIR) intersubband laser generator is proposed in which the continuum states above an Al0.2 Ga0.8As-GaAs-Al0.2Ga0.8As single quantum well structure with a well width of L=170 Å serve as the highest level in a four-level laser system. This simple structure has been designed to take advantage of the electro-phonon resonance (EPR) effect induced by electron interactions with longitudinal optical (LO) phonons in GaAs-based two-dimensional semiconductor systems (2DSSs), in achieving population inversion between the second and third electronic subbands. The design allows much greater flexibility in the choice of pumping sources and simplifies considerably the device fabrication. The electronic subband structure of the proposed FIR intersubband laser device has been obtained from a self-consistent calculation via solving coupled Schrodinger and Poisson equations
Keywords :
III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium arsenide; optical pumping; population inversion; quantum well lasers; submillimetre wave lasers; Al0.2Ga0.8As-GaAs-Al0.2Ga 0.8As; LO phonon; Poisson equation; Schrodinger equation; continuum states; electro-phonon resonance; electronic subband structure; far infrared laser; four-level system; optical pumping; population inversion; single quantum well; two-dimensional semiconductor system; Charge carrier processes; Electron optics; Finite impulse response filter; Laser excitation; Optical design; Optical pumping; Paramagnetic resonance; Pump lasers; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791601
