• DocumentCode
    31382
  • Title

    Analytical Modeling of Industrial-Related Silicon Solar Cells

  • Author

    Fellmeth, Tobias ; Clement, Florian ; Biro, Daniel

  • Author_Institution
    Fraunhofer Inst. for Solar Energy Syst. ISE, Freiburg, Germany
  • Volume
    4
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    504
  • Lastpage
    513
  • Abstract
    Fast and accurate simulation tools are key to increasing our understanding of silicon-based solar cells. A lucid graphical unit interface and experimentally obtained input parameters help make these tools accessible for a wide range of users. In this paper, we present a fast Excel tool based on the well-known two-diode model supporting conventional and metal-wrap-through cell architectures. The selective emitter approach, spatial varying emitter recombination, and optical simulations are taken into account. A set of consistent input parameters, including the emitter recombination in the passivated case, as well as the metal contacted for both idealities, are given as a function of the emitter sheet resistance. This set on input parameters is associated with industrial-related technologies for conventional and metal-wrap-through silicon solar cells.
  • Keywords
    electron-hole recombination; elemental semiconductors; semiconductor diodes; silicon; solar cells; Excel tool; Si; industrial-related silicon solar cells; lucid graphical unit interface; metal-wrap-through cell architectures; optical simulations; passivated case; selective emitter; spatial varying emitter recombination; two-diode model; Charge carriers; Frequency modulation; Mathematical model; Metals; Photovoltaic cells; Resistance; Silicon; Emitter; metal wrap through (MWT); modeling; solar cell;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2013.2281105
  • Filename
    6615920